Datasheet BS2101F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS2101F	600V High voltage High & Low-side / Gate Driver 600V High voltage High & Low-side, Gate Driver BS2101F General Description The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t	ROHM Semiconductor

BS21 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BS2103F	600V High voltage High & Low-side / Gate Driver 600V High voltage High & Low-side, Gate Driver BS2103F General Description The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power	ROHM Semiconductor
BS2130F-G	600V High Voltage 3 Phase Bridge Driver 600V High Voltage 3 Phase Bridge Driver BS2130F-G General Description The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power	ROHM Semiconductor
BS2114F	600V High voltage High & Low-side Gate Driver 600V High voltage High & Low-side, Gate Driver BS2114F General Description The BS2114F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power	ROHM Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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