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Datasheet BS208 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BS208 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS208 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf |
 NXP Semiconductors |
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| 2 | BS208 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS208
P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
· · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets
E
A B
TO-92 Dim A B
C
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70 — 0.63 3.6 |
 Diodes Incorporated |
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| 1 | BS208 | DMOS Transistors (P-Channel) BS208
DMOS Transistors (P-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMO |
 General Semiconductor |
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