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600V High Voltage 3 Phase Bridge Driver BS2130F-G General Description The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in t
600V High voltage High & Low-side, Gate Driver BS2114F General Description The BS2114F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t
600V High voltage High & Low-side, Gate Driver BS2101F General Description The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in t
600V High voltage High & Low-side, Gate Driver BS2100F General Description The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in
ABS/ABT SERIES PAGE ONE OF THREE %2$5'0281762&.(76WUDLJKW FEATURES Highly reliable box style contact Constant retention force after repeated cycles Available in single and dual row versions Standoffs reduce rework due to flux residue Mates with Crane’s P
S Series 100 Watt DC-DC Converters Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage LGA • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with conve
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