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BS170P  

marutsu
marutsu

BS170P

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω BS170P REFER TO ZVN3306A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current




관련 부품 BS17 상세설명

BS170G  

  
Small Signal MOSFET

BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissip



ON Semiconductor
ON Semiconductor

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BS170F  

  
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power D



Zetex Semiconductors
Zetex Semiconductors

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BS170L  

  
N-Channel Enhancement-Mode MOS Transistor

N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92



Calogic  LLC
Calogic LLC

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BS170  

  
N-CHANNEL ENHANCEMENT MODE TRANSISTOR

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data ·



Diodes Incorporated
Diodes Incorporated

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BS170  

  
N-Channel 60-V (D-S) MOSFET

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 to



Vishay Siliconix
Vishay Siliconix

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BS170  

  
DMOS Transistors (N-Channel)

BS170 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.



General Semiconductor
General Semiconductor

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