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Datasheet BS108 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BS108 | 200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS108/D
Logic Level TMOS
BS108
®
1 DRAIN
N–Channel Enhancement Mode
This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltag |
 Motorola Inc |
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| 3 | BS108 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS108 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf |
 NXP Semiconductors |
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| 2 | BS108 | DMOS Transistors (N-Channel) BS108
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMO |
 General Semiconductor |
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| 1 | BS108 | Small Signal MOSFET
BS108
Preferred Device
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high |
 ON Semiconductor |
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