Datasheet BS107PT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BS107PT	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Vol	Zetex Semiconductors

BS10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BS107	TMOS Switching(N-Channel-Enhancement) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs	Motorola Inc
BS107A	N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATU	NXP Semiconductors
BS108	200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor o	Motorola Inc

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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