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Datasheet BS107A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BS107A | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS107A N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct inter |
 NXP Semiconductors |
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| 2 | BS107A | TMOS Switching(N-Channel-Enhancement) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N–Channel — Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont |
 Motorola Inc |
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| 1 | BS107A | Small Signal MOSFET 250 mAmps
BS107, BS107A
Preferred Device
Small Signal MOSFET 250 mAmps, 200 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Total Device D |
 ON Semiconductor |
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