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Datasheet BS1001-7R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BS1001-7R | 100 Watt DC-DC Converters S Series
100 Watt DC-DC Converters
Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage
LGA
• Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with conve |  Power-One | converter |
BS1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BS1001-7R | 100 Watt DC-DC Converters S Series
100 Watt DC-DC Converters
Wide input voltage ranges from 8...385 V DC 1or 2 isolated outputs up to 48 V DC 4 kV AC I/O electric strengh test voltage
LGA
• Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71 °C with conve Power-One converter | | |
| 2 | BS100C | PHOTODIODE FOR VISIBLE LIGHT Sharp Electrionic Components diode | | |
| 3 | BS107 | N-Channel Enhancement-Mode MOS Transistors Siliconix
VN2010L/BS107
NĆChannel EnhancementĆMode MOS Transistors
Product Summary
Part Number VN2010L BS107
V(BR)DSS Min (V) 200
rDS(on) Max (W)
10 @ VGS = 4.5 V 28 @ VGS = 2.8 V
VGS(th) (V) 0.8 to 1.8 0.8 to 3
ID (A) 0.19 0.12
Features
Benefits
D Low OnĆResistance: 6 W D Secondary Br  TEMIC transistor | | |
| 4 | BS107 | TMOS Switching(N-Channel-Enhancement) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N–Channel — Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Cont  Motorola Inc data | | |
| 5 | BS107 | N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BS107 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES • Direct interf  NXP Semiconductors transistor | | |
| 6 | BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Siemens Semiconductor Group transistor | | |
| 7 | BS107 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features
· · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets
E
A
TO-92
B
Dim A B
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70 — 0.63 3.68 2.67 1.40
Mechanical Data
· · · ·  Diodes Incorporated transistor | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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