BLV4N60
SHANGHAI BELLING
N-channel Enhancement Mode Power MOSFETBLV4N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
600V 2.2Ω 4A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS tech