BLV12
NXP Semiconductors
VHF power transistorDISCRETE SEMICONDUCTORS
DATA SHEET
BLV12 VHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excelle
BLV7N60
N-Channel Enhancement Mode Power MOSFETBLV7N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
600V 1.0Ω 7A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency swi
BELLING
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BLV2N60
N-channel Enhancement Mode Power MOSFETBLV2N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
600V 4.4Ω 2A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency swi
SHANGHAI BELLING
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BLV297
N-Channel Enhancement Mode Power MOSFETBLV297
N-channel Enhancement Mode Power MOSFET
• Ease of Paralleling • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
200V 2.0Ω 0.65A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic le
BELLING
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