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BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 8Ω 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switc
BLV1N60A N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 15Ω 0.5A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency s
DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load
DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability
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