Datasheet BLH3355 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BLH3355	NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar typ	SHANGHAI BELLING

BLH3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BLH3355	NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier	SHANGHAI BELLING
BLH3356B	High-frequency low-noise NPN transistor BLH3356B 高频低噪声 NPN 晶体管描述：硅外延 NPN 晶体管应用：高频低噪声放大，用于 VHF，UHF 和 CATV 工作条件(T=25℃)：参数 BC 击穿电压 EC 击穿电压 EB 击穿电压集电极电流功耗结温度存储温�	SHANGHAI BELLING
BLH3356	High-frequency low-noise NPN transistor BLH3356 高频低噪声 NPN 晶体管描述: 描述: BLH3356 是一种低噪声和高功率增益的硅外延 NPN 晶体管。应用: 应用: 高频低噪声放大工作条件 (T=25℃ T=25℃) 参数 BC 击穿电压 EC 击穿电压 EB 击穿电压集�	SHANGHAI BELLING

Esta página es del resultado de búsqueda del BLH3355. Si pulsa el resultado de búsqueda de BLH3355 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap