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Datasheet BLF861 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BLF861 | UHF power LDMOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861 UHF power LDMOS transistor
Preliminary specification 1999 Aug 26
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli | NXP Semiconductors | transistor |
2 | BLF861A | UHF POWER LDMOS TRANSISTOR BLF861A
UHF POWER LDMOS TRANSISTOR
DESCRIPTION:
The ASI BLF861A ia a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor.
PACKAGE STYLE .385X.850 4LFG
FEATURES:
• Internal input-output matching • Omnigold™ Metalization System
MAXIMUM RATINGS
ID VDS VGS | Advanced Semiconductor | transistor |
3 | BLF861A | UHF power LDMOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861A UHF power LDMOS transistor
Product specification Supersedes data of 2000 Aug 04 2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Ex | NXP Semiconductors | transistor |
4 | BLF861A | Trans RF MOSFET N-CH 65V 18A 5-Pin LDMOST | New Jersey Semiconductor | mosfet |
BLF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BLF0810-180 | Base station LDMOS transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
Philips Semiconductors Product specification
Base station LDMOS transistors
FEAT NXP Semiconductors transistor | | |
2 | BLF0810-90 | Base station LDMOS transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
Philips Semiconductors Product specification
Base station LDMOS transistors
FEATUR NXP Semiconductors transistor | | |
3 | BLF0810S-180 | Base station LDMOS transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
Philips Semiconductors Product specification
Base station LDMOS transistors
FEAT NXP Semiconductors transistor | | |
4 | BLF0810S-90 | Base station LDMOS transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90 Base station LDMOS transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
Philips Semiconductors Product specification
Base station LDMOS transistors
FEATUR NXP Semiconductors transistor | | |
5 | BLF082 | (BLF082 / BLF820) surface Mountable RFI Filters CORCOM Product Guide Surface Mountable RFI Filters
BLF Series
BLF
UL Recognized Specifications
Capacitors: Type Standard Value: BLF820 BLF082 Standard Tolerance: Ferrites: Type: Inductance: Housing Material: High resistivity, nickel zinc ceramic 2 µH Glass-filled polyester (UL94V-0) 1000 VAC for Tyco Electronics filter | | |
6 | BLF1043 | UHF power LDMOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D438
BLF1043 UHF power LDMOS transistor
Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Exc NXP Semiconductors transistor | | |
7 | BLF1046 | UHF power LDMOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1046 UHF power LDMOS transistor
Preliminary specification Supersedes data of 1999 Nov 02 2000 Feb 02
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent rugg NXP Semiconductors transistor | |
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Número de pieza | Descripción | Fabricantes | |
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