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Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The in
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Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen compounds) • Low external component co
BGA6489 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6489 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic, low
Silicon Discretes The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Application Note No. 069 Features • Versatile, easy-to-use LNA MMIC in 70 GHz ft SiGe technology 3 • 50 Ω matched output, pre-matched input • Integrated output DC blo
Data sheet, BGA612, Nov. 2003 BGA 612 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC Secure Mo bile Solu ti ons Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineo
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