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Datasheet BFY450 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BFY450 | HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25- |
 Infineon Technologies AG |
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| 4 | BFY450ES | HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25- |
Infineon Technologies AG |
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| 3 | BFY450H | HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25- |
Infineon Technologies AG |
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| 2 | BFY450P | HiRel NPN Silicon RF Transistor BFY450 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25- |
Infineon Technologies AG |
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