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Datasheet BFY420 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BFY420 | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequenc |
 Infineon Technologies AG |
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| 4 | BFY420ES | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequenc |
Infineon Technologies AG |
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| 3 | BFY420H | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequenc |
Infineon Technologies AG |
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| 2 | BFY420P | HiRel NPN Silicon RF Transistor BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequenc |
Infineon Technologies AG |
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