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BFY33 전자부품 데이터시트
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BFY33 전자부품 회로 및
기능 검색 결과
BFY33
Micro Electronics
(BFYxx) Medium Power Amplifiers and Switches
Bipolar NPN Device
BFY56B Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 55V
Seme LAB
Bipolar NPN Device
BFY52 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO
Seme LAB
SILICON NPN TRANSISTOR
SILICON NPN TRANSISTOR BFY52 • V(BR)CEO = 20V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Colle
TT
HiRel NPN Silicon RF Transistor
BFY405 HiRel NPN Silicon RF Transistor • • • • • • • • HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency
Infineon Technologies AG
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