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BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611
BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611
BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611
BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:
BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:
BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:
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