Datasheet BFY182S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BFY182S	HiRel NPN Silicon RF Transistor BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:	Infineon Technologies AG

BFY1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BFY183	HiRel NPN Silicon RF Transistor BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC De	Infineon Technologies AG
BFY193	HiRel NPN Silicon RF Transistor BFY193 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Space Qualified ESA/SCC De	Infineon Technologies AG
BFY193	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.) HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/	Siemens Semiconductor Group

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Número de pieza	Descripción	Fabricantes	PDF
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