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BFY182 전자부품 데이터시트



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BFY182  

Infineon Technologies AG
Infineon Technologies AG

BFY182

HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp



BFY182  

Siemens Semiconductor Group
Siemens Semiconductor Group

BFY182

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz ¥ qual



BFY182ES  

Infineon Technologies AG
Infineon Technologies AG

BFY182ES

HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp



BFY182H  

Infineon Technologies AG
Infineon Technologies AG

BFY182H

HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp



BFY182P  

Infineon Technologies AG
Infineon Technologies AG

BFY182P

HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp



BFY182S  

Infineon Technologies AG
Infineon Technologies AG

BFY182S

HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp



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