BFY182
Infineon Technologies AG
HiRel NPN Silicon RF TransistorBFY182 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp
BFY182
Siemens Semiconductor Group
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz ¥ qual
BFY182ES
Infineon Technologies AG
HiRel NPN Silicon RF TransistorBFY182 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp
BFY182H
Infineon Technologies AG
HiRel NPN Silicon RF TransistorBFY182 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp
BFY182P
Infineon Technologies AG
HiRel NPN Silicon RF TransistorBFY182 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp
BFY182S
Infineon Technologies AG
HiRel NPN Silicon RF TransistorBFY182 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Sp