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Datasheet BFY181 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BFY181 | HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 561 |
 Siemens Semiconductor Group |
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| 5 | BFY181 | HiRel NPN Silicon RF Transistor BFY181 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No. |
 Infineon Technologies AG |
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| 4 | BFY181ES | HiRel NPN Silicon RF Transistor BFY181 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No. |
Infineon Technologies AG |
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| 3 | BFY181H | HiRel NPN Silicon RF Transistor BFY181 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No. |
Infineon Technologies AG |
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