파트넘버.co.kr BFY180P 데이터시트 검색

BFY180P 전자부품 데이터시트



BFY180P 전자부품 회로 및
기능 검색 결과



BFY180P  

Infineon Technologies AG
Infineon Technologies AG

BFY180P

HiRel NPN Silicon RF Transistor

BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ES




관련 부품 BFY18 상세설명

BFY183S  

  
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611



Infineon Technologies AG
Infineon Technologies AG

PDF



BFY183P  

  
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611



Infineon Technologies AG
Infineon Technologies AG

PDF



BFY183H  

  
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611



Infineon Technologies AG
Infineon Technologies AG

PDF



BFY183ES  

  
HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611



Infineon Technologies AG
Infineon Technologies AG

PDF



BFY182S  

  
HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:



Infineon Technologies AG
Infineon Technologies AG

PDF



BFY182P  

  
HiRel NPN Silicon RF Transistor

BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.:



Infineon Technologies AG
Infineon Technologies AG

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처