BFX17
Seme LAB
Bipolar NPN DeviceBFX17
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45
BFX85
AMPLIFIER TRANSISTORRating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Res
Motorola Semiconductors
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BFX85
NPN SILICON EPITAXIAL SWITCHING TRANSISTORBFX85
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
NPN SILICON EPITAXIAL SWITCHING TRANSISTOR
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
VCEO = 60V IC = 1A
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.0
Seme LAB
PDF