BFT45
NXP Semiconductors
PNP high-voltage transistorDISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFT45 PNP high-voltage transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 18
Philips Semiconductors
Product specification
PNP high-voltage trans
BFT53
Bipolar NPN Device in a Hermetically sealed TO18 Metal PackageBFT53
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.
Bipolar NPN Device. VCEO = 35V
0.48 (0.019) 0.41 (0.016) dia.
IC = 1A
All Semelab hermetically sealed products can be processed in accordance with
Seme LAB
PDF
BFT51F
NPN Silicon High Frequency TransistorNPN SILICON HIGH FREQUENCY TRANSISTOR e
DESCRIPTION:
The ASI BFT51 is Designed for High Frequency Amplifier Applications.
w
w
a t a D . w
e h S
U 4 t
m o .c
BFT51F
PACKAGE STYLE TO- 126
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA 20 V 3.0 W @ TC = 25 °C -65 °C to +175 °C -65 °C to
Advanced Semiconductor
PDF
BFT44S
Bipolar PNP DeviceBFT44S
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 300V
5.08 (0.200) typ.
Semelab
PDF