BFT44S
Semelab
Bipolar PNP DeviceBFT44S
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.02
BFT44
PNP Silicon TransistorBFT44
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
PNP SILICON TRANSISTOR
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
FEATURES
5.08 (0.200) typ.
• High Voltage
2.54 (0.100)
2 1
0.74 (0.029) 1.
Semelab
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BFT45
PNP high-voltage transistorDISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFT45 PNP high-voltage transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 18
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES • Low current (max. 500
NXP Semiconductors
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BFT46
N-channel silicon FETDISCRETE SEMICONDUCTORS
DATA SHEET
BFT46 N-channel silicon FET
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon FET
DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect trans
NXP Semiconductors
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