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BFS17,S CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol vCEO vCBO THERMAL CHARACTERISTICS Characteristic •Total Device Dissipation, T/ = 25°C Derate above 25°C Symbol PD Storage Temperatu
Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 BFS17/BFS17R 1 23 94 9280 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collecto
SMD Type Transistors NPN Transistors BFS17-HF (KFS17-HF) ■ Features ● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.9
Elektronische Bauelemente BFS20 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(
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