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Datasheet BFS17S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BFS17S | RF TRANSISTOR BFS17,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage
Symbol vCEO vCBO
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, T/ = 25°C Derate above 25°C
Symbol PD
Storage Temperatu |
 Motorola Semiconductors |
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| 2 | BFS17S | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) BFS 17S
NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
Tape loading orientation
Type BFS 17S
Marking Ordering Code MCs Q62702-F1645
Pin Configuration
Package
1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363
Maximum Ratings of any single Transisto |
 Siemens Semiconductor Group |
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| 1 | BFS17S | NPN Silicon RF Transistor NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• BFS17S: For orientation in reel see package information below
• Pb-free (RoHS compliant) package
BFS17S
4
5 6
3 2
1
ESD (Electrostatic discharge) sensitive device, observe handling |
 Infineon Technologies AG |
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