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BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Maximum Ratings Parameter
BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz 3 1 2 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Co
BFR949T NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Maximum Ratings Parameter Markin
DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION NPN resistance-stabilized transistor in a SOT122E ca
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