BFR949
Infineon Technologies AG
NPN Silicon RF TransistorBFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
T
BFR949F
Infineon Technologies AG
NPN Silicon RF TransistorBFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
T
BFR949L3
Infineon Technologies AG
NPN Silicon RF TransistorBFR949L3
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
3 1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
BFR949T
Infineon Technologies AG
NPN Silicon RF TransistorBFR949T
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
f T = 9 GHz
F = 1.0 dB at 1 GHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type B