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Datasheet BFR93AW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BFR93AW | NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW NPN 5 GHz wideband transistor
Product specification Supersedes data of November 1992
1995 Sep 18
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AW
FEATURES High power gain Gold metallization ensures
excellent relia |
 NXP Semiconductors |
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| 4 | BFR93AW | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) BFR 93AW
NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 93AW R2s Maximum Ratings Pa |
 Siemens Semiconductor Group |
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| 3 | BFR93AW | Silicon NPN Planar RF Transistor BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Features
D High power gain D High transition frequency D Low noise figure
1 1
13 581 94 9280 9510527
13 5 |
 Vishay Telefunken |
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| 2 | BFR93AW | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available
BFR93AW
32 1
ESD (Electro |
 Infineon Technologies AG |
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