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Datasheet BFR380 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 BFR380   NPN Silicon RF Transistor

BFR380F NPN Silicon RF Transistor Preliminary data  High current capability and low figure for wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device,
Infineon Technologies AG
Infineon Technologies AG
datasheet BFR380 pdf
3 BFR380F   Linear Low Noise Silicon Bipolar RF Transistor

Linear Low Noise Silicon Bipolar RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) an
Infineon Technologies AG
Infineon Technologies AG
datasheet BFR380F pdf
2 BFR380L3   Linear Low Noise Silicon Bipolar RF Transistor

Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Pb-free (RoHS compliant) and
Infineon Technologies AG
Infineon Technologies AG
datasheet BFR380L3 pdf
1 BFR380T   NPN Silicon RF Transistor

BFR380T NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive
Infineon Technologies AG
Infineon Technologies AG
datasheet BFR380T pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

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