파트넘버.co.kr BFR193L3 데이터시트 검색

BFR193L3 전자부품 데이터시트



BFR193L3 전자부품 회로 및
기능 검색 결과



BFR193L3  

Infineon
Infineon

BFR193L3

NPN Bipolar RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193L3 3




관련 부품 BFR193 상세설명

BFR193W  

  
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 193W RCs Q62702-F



Siemens Semiconductor Group
Siemens Semiconductor Group

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BFR193TW  

  
Silicon NPN Planar RF Transistor

BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features D Low noise figure D High



Vishay Telefunken
Vishay Telefunken

PDF



BFR193F  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free product • Qualification report according to AEC-Q101 available BFR193F 32 1 ESD (E



Infineon
Infineon

PDF



BFR193W  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic disc



Infineon Technologies AG
Infineon Technologies AG

PDF



BFR193T  

  
Silicon NPN Planar RF Transistor

BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features D Low noise figure D High



Vishay Telefunken
Vishay Telefunken

PDF



BFR193  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193 ESD (Electrostatic discharge)



Infineon Technologies AG
Infineon Technologies AG

PDF




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