BFR193
Infineon Technologies AG
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 availabl
BFR193
Siemens Semiconductor Group
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)BFR 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
BFR193F
Infineon
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free product • Qualification report according to
BFR193L3
Infineon
NPN Bipolar RF TransistorNPN Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR193L3
3
BFR193T
Infineon Technologies AG
NPN Silicon RF TransistorBFR193T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
3
F = 1.3 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaut
BFR193T
Vishay Telefunken
Silicon NPN Planar RF TransistorBFR193T/BFR193TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifie
BFR193TW
Vishay Telefunken
Silicon NPN Planar RF TransistorBFR193T/BFR193TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifie
BFR193W
Infineon Technologies AG
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 availabl