BFR182T
Infineon Technologies AG
NPN Silicon RF TransistorBFR182T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling p
BFR182T
Vishay Telefunken
Silicon NPN Planar RF TransistorBFR182T/BFR182TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Features
D Low nois
BFR182TW
Vishay Telefunken
Silicon NPN Planar RF TransistorBFR182T/BFR182TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Features
D Low nois