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Datasheet BFR182 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | BFR182 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) BFR 182
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 182 RGs Q62702-F |
Siemens Semiconductor Group |
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6 | BFR182 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR182
ESD (Electrostatic disch |
Infineon Technologies AG |
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5 | BFR182T | Silicon NPN Planar RF Transistor BFR182T/BFR182TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Features
D Low noise figure D High power gain
1 1
13 581 9 |
Vishay Telefunken |
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4 | BFR182T | NPN Silicon RF Transistor BFR182T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR182T
Maximum Ratings |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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