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Datasheet BFR181 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BFR181 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) BFR 181
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181 RFs Q627 |
 Siemens Semiconductor Group |
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| 6 | BFR181 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR181
ESD (Electrostatic dis |
 Infineon Technologies AG |
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| 5 | BFR181T | Silicon NPN Planar RF Transistor BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure D High power gain
1 1
13 581 |
 Vishay Telefunken |
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| 4 | BFR181T | NPN Silicon RF Transistor BFR181T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR181T
Maximum Rati |
Infineon Technologies AG |
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