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PNP Silicon RF Transistor q q BFQ 76 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. Complementary type: BFQ 71 (NPN). ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 76 Marking 76 Ordering Code (tape and reel) Q62702-F804 Pin Configur
NPN Silicon RF Transistor q BFQ 74 For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. Hermetically sealed ceramic package. HiRel/Mil screening available. q q ESD: Electrostatic discharge
NPN Silicon RF Transistor q BFQ 71 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. Hermetically sealed ceramic package. HiRel/Mil screening available. CECC-type available: CECC 50002/260. q q q ESD: Electrostatic discharge sensitive
BFQ790 High Linearity High Gain 1/2 Watt RF Driver Amplifier Data Sheet Revision 2.0, 2014-08-26 Preliminary RF & Protection Devices Edition 2014-08-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information
PNP Silicon RF Transistor q q BFQ 75 For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. Complementary type: BFQ 72 (NPN). ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 75 Marking 75 Ordering Code (tape and reel) Q62702-F803 Pin C
NPN Silicon RF Transistor For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. q Hermetically sealed ceramic package q HiRel/Mil screening available. q BFQ 70 ESD: Electrostatic discharge sensitive device, observe handling pr
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