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Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 1 2 3 BFQ19
BFQ19 CASE 345-01, STYLE 1 SOT-89 RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Max (f > 1.0 MHz) —Collector Current Average Operating and Storage Junction Temperature Range Symbol vCEO VCBO vEBO 'CM ICAV
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Operating and Storage Junction Temperature Range Symbol vCEO VCBO vebo "C Tj. Tstg Value 15 25 12 150 -55 to +150 Unit V V V mA °C THERMAL CHARACTERISTICS Characteristic
BFQ17 CASE 345-01, STYLE 1 SOT-89 RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (RBE =s 50 a) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Operating and Storage Junction Temperature Range Symbol vCEO VCER Value
BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ 193 Marking Ordering Code RCs Q62702-F1312 Pin Config
DISCRETE SEMICONDUCTORS DATA SHEET BFQ161 NPN video transistor Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistor FEATURES • Low output capacitance • High gain bandwi
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