BFP650F
Infineon
Linear Low Noise SiGe:C Bipolar RF TransistorLinear Low Noise SiGe:C Bipolar RF Transistor
• For medium power amplifiers and driver stages • Based on Infineon' s reliable high volume Silicon
Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gai
BFP650
High Linearity Silicon Germanium Bipolar RF TransistorBFP650
High Linearity Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-09-13
RF & Protection Devices
Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
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