BFP520F
Infineon Technologies AG
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS co
BFP520
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)SIEGET ®45
NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45
Siemens Semiconductor Group
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BFP520
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz
• High gain and low noise at high frequencies due to high transit freq
Infineon Technologies AG
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