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BFP520  

Infineon Technologies AG
Infineon Technologies AG

BFP520

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at h



BFP520  

Siemens Semiconductor Group
Siemens Semiconductor Group

BFP520

NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalizatio



BFP520F  

Infineon Technologies AG
Infineon Technologies AG

BFP520F

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS co



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