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BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500 V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.
Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visi
BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this docume
BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document sh
Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free pack
SIEGET® 25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability • SIEGET ® 25
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