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BFP490 전자부품 데이터시트



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BFP490  

Siemens Semiconductor Group
Siemens Semiconductor Group

BFP490

NPN Silicon RF Transistor (Q62702-F1721)

SIEGET® 25 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability




관련 부품 BFP4 상세설명

BFP460  

  
Low Noise Silicon Bipolar RF Transistor

BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500 V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.



Infineon Technologies AG
Infineon Technologies AG

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BFP405F  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visi



Infineon Technologies AG
Infineon Technologies AG

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BFP450  

  
Linear Low Noise Silicon Bipolar RF Transistor

BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this docume



Infineon Technologies AG
Infineon Technologies AG

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BFP420F  

  
Low Noise Silicon Bipolar RF Transistor

BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document sh



Infineon Technologies AG
Infineon Technologies AG

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BFP410  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free pack



Infineon
Infineon

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BFP450  

  
NPN Silicon RF Transistor (For medium power amplifiers)

SIEGET® 25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability • SIEGET ® 25



Siemens Semiconductor Group
Siemens Semiconductor Group

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