BFP450
Infineon Technologies AG
Linear Low Noise Silicon Bipolar RF TransistorBFP450
Linear Low Noise Silicon Bipolar RF Transistor
Datasheet
Revision 1.2, 2013-07-29
RF & Protection Devices
Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
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BFP450
Siemens Semiconductor Group
NPN Silicon RF Transistor (For medium power amplifiers)SIEGET® 25
NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalizati