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BFP420F  

Infineon Technologies AG
Infineon Technologies AG

BFP420F

Low Noise Silicon Bipolar RF Transistor

BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer T




관련 부품 BFP42 상세설명

BFP420  

  
Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with vi



Infineon Technologies AG
Infineon Technologies AG

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BFP420  

  
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

SIEGET® 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Gr



Siemens Semiconductor Group
Siemens Semiconductor Group

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