BFP420F
Infineon Technologies AG
Low Noise Silicon Bipolar RF TransistorBFP420F
Low Noise Silicon Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-11-07
RF & Protection Devices
Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
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BFP420
Low Noise Silicon Bipolar RF TransistorLow Noise Silicon Bipolar RF Transistor
• For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz
Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package
with vi
Infineon Technologies AG
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BFP420
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)SIEGET® 25
NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Gr
Siemens Semiconductor Group
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