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Datasheet BFP193 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | BFP193 | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) BFP 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F12 |
Siemens Semiconductor Group |
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6 | BFP193 | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
3 4
BFP193
2 1
ESD (Electrostatic d |
Infineon Technologies AG |
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5 | BFP193T | Silicon NPN Planar RF Transistor BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
D Low noise figu |
Vishay Telefunken |
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4 | BFP193TRW | Silicon NPN Planar RF Transistor BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.
Features
D Low noise figu |
Vishay Telefunken |
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Número de pieza | Descripción | Fabricantes | |
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