BFP181R
Infineon Technologies AG
NPN Silicon RF TransistorBFP181R
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP181R
Maximu
BFP181R
Siemens Semiconductor Group
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)BFP 181R
NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering