|
BFG 19S NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 19S Maxim
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors NPN 5 GHz wideband transistors Product specification BFG590; BFG590/X FEATURES • High power gain
BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features s s s s High power gain Low noise figure H
BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features s s s s High power gain Low noise figure
2.3 RF Bipolar transistors 2.3.1 Wideband transistors RF wideband transistors: http://www.semiconductors.philips.com/markets/mms/products/discretes/key_solutions/multimarket/transistors/25_45ghz_wideband/index.html Wideband transistors The fT-IC curve represents Transition Frequency (fT) characte
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |