BFG193
Infineon Technologies AG
NPN Silicon RF TransistorBFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
4
F = 1.3 dB at 900 MHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG19
BFG193
Siemens Semiconductor Group
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)BFG 193
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code