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Datasheet BF996S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BF996S | N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES • Protected against excessive input voltage surges by integrated |
 NXP Semiconductors |
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| 4 | BF996S | N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes D Low noise figure D Low feedback capacitance
2 |
 Vishay Telefunken |
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| 3 | BF996S | Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Silicon N Channel MOSFET Tetrode
q q q
BF 996 S
For input stages in UHF TV tuners High transconductance Low noise figure
Type BF 996 S
Marking MH
Ordering Code (tape and reel) Q62702-F1021
Pin Configuration 1 2 3 4 S D G2 G1
Package1) SOT-143
Maximum Ratings Parameter Drain-source voltage Dr |
 Siemens Semiconductor Group |
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| 2 | BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes D Low noise figure D Low feedback capacitance
2 |
Vishay Telefunken |
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