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Datasheet BF908WR Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF908WR | N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS
DATA SHEET
BF908WR N-channel dual-gate MOS-FET
Preliminary specification File under Discrete Semiconductors, SC07 1995 Apr 25
Philips Semiconductors
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
FEATURES • High forward transfer admitta |  NXP Semiconductors | gate |
BF9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF900 | Sicherungshalter Type BF900 Sicherungshalter
IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen
Sicherungshalter f�  Inter Control data | | |
| 2 | BF901 | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
| 3 | BF901R | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
| 4 | BF9024SPD-M | P-Channel MOSFET and Schottky Diode BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
8
7
6
5
Features MOSFE  BYD mosfet | | |
| 5 | BF9028DND-A | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
D D DD 87 6 5
Features BYD mosfet | | |
| 6 | BF9028DND-GE | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z BYD mosfet | | |
| 7 | BF9028DNT | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. .
TSSOP-8
1 : drain1 2, BYD mosfet | |
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